Ultrafast Photocarrier Relaxation Mechanisms in Sputter-Deposited CdTe Quantum Dot Thin Films

Persistent Link:
http://hdl.handle.net/10150/193596
Title:
Ultrafast Photocarrier Relaxation Mechanisms in Sputter-Deposited CdTe Quantum Dot Thin Films
Author:
Juncker, Christophe Rene Henri
Issue Date:
2007
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Photocarrier relaxation mechanisms in CdTe quantum dots in the strong confinement regime were investigated using femtosecond pump-probe measurements. The quantum dots were formed in films deposited on silica substrates using a sequential RF magnetron sputtering process with heat treatment to grow crystallites of various sizes. Size selection was achieved by tuning the laser to various wavelengths across the first excitation transition. The recombination mechanism showed a biexponential decay, which was fitted to a three-level model. It was shown that recombination occurs increasingly through the intermediate energy level as the size of the dots decreases. The nature of the intermediate level and the role of Auger recombination is discussed.
Type:
text; Electronic Dissertation
Keywords:
quantum dots; nanoclusters
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Materials Science & Engineering; Graduate College
Degree Grantor:
University of Arizona
Advisor:
Simmons, Joseph H.
Committee Chair:
Simmons, Joseph H.

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleUltrafast Photocarrier Relaxation Mechanisms in Sputter-Deposited CdTe Quantum Dot Thin Filmsen_US
dc.creatorJuncker, Christophe Rene Henrien_US
dc.contributor.authorJuncker, Christophe Rene Henrien_US
dc.date.issued2007en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractPhotocarrier relaxation mechanisms in CdTe quantum dots in the strong confinement regime were investigated using femtosecond pump-probe measurements. The quantum dots were formed in films deposited on silica substrates using a sequential RF magnetron sputtering process with heat treatment to grow crystallites of various sizes. Size selection was achieved by tuning the laser to various wavelengths across the first excitation transition. The recombination mechanism showed a biexponential decay, which was fitted to a three-level model. It was shown that recombination occurs increasingly through the intermediate energy level as the size of the dots decreases. The nature of the intermediate level and the role of Auger recombination is discussed.en_US
dc.typetexten_US
dc.typeElectronic Dissertationen_US
dc.subjectquantum dotsen_US
dc.subjectnanoclustersen_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineMaterials Science & Engineeringen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorSimmons, Joseph H.en_US
dc.contributor.chairSimmons, Joseph H.en_US
dc.contributor.committeememberSimmons, Joseph H.en_US
dc.contributor.committeememberPotter, Barrett G.en_US
dc.contributor.committeememberLucas, Pierreen_US
dc.contributor.committeememberPeyghambarian, Nasseren_US
dc.contributor.committeememberArmstrong, Neal R.en_US
dc.identifier.proquest2368en_US
dc.identifier.oclc659748251en_US
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