CHEMICAL VAPOR DEPOSITION OF SAMARIUM COMPOUNDS FOR THE DEVELOPMENT OF THIN FILM OPTICAL SWITCHES BASED ON PHASE TRANSITION MATERIALS.

Persistent Link:
http://hdl.handle.net/10150/187650
Title:
CHEMICAL VAPOR DEPOSITION OF SAMARIUM COMPOUNDS FOR THE DEVELOPMENT OF THIN FILM OPTICAL SWITCHES BASED ON PHASE TRANSITION MATERIALS.
Author:
HILLMAN, PAUL DALLAS.
Issue Date:
1984
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The physical properties of single crystals of samarium monosulfide exhibit a first order semiconductor-to-metal transition near 6.5 kbar. However, thin films of SmS show only a gradual change in their properties on applying pressure and this renders the technical utilization of the material difficult. Several mechanisms have been proposed as the cause of the smoothing of the transition. They include intrinsic stress, impurities, grain size, improper stoichiometry, and porosity, all of which can be traced to the physical vapor deposition techniques employed in preparing the films. In contrast, chemical vapor deposition was employed in this study because previous work had shown that it could minimize these detrimental modifications in thin films. A new CVD system was tested using a volatile organometallic as the samarium source and reacting it with H₂S. The deposited films contained considerable amounts of oxygen as evidenced by structure analysis, and the origin was traced to the samarium organometallic. The reaction of oxygen-free samarium tricyclopentadienyl with H₂S as well as chemical transport are suggested for deposition of stress-free SmS thin films in future work.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Optical films.; Phase transformations (Statistical physics); Samarium -- Optical properties.; Thin films.; Vapor-plating.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Optical Sciences; Graduate College
Degree Grantor:
University of Arizona

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleCHEMICAL VAPOR DEPOSITION OF SAMARIUM COMPOUNDS FOR THE DEVELOPMENT OF THIN FILM OPTICAL SWITCHES BASED ON PHASE TRANSITION MATERIALS.en_US
dc.creatorHILLMAN, PAUL DALLAS.en_US
dc.contributor.authorHILLMAN, PAUL DALLAS.en_US
dc.date.issued1984en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe physical properties of single crystals of samarium monosulfide exhibit a first order semiconductor-to-metal transition near 6.5 kbar. However, thin films of SmS show only a gradual change in their properties on applying pressure and this renders the technical utilization of the material difficult. Several mechanisms have been proposed as the cause of the smoothing of the transition. They include intrinsic stress, impurities, grain size, improper stoichiometry, and porosity, all of which can be traced to the physical vapor deposition techniques employed in preparing the films. In contrast, chemical vapor deposition was employed in this study because previous work had shown that it could minimize these detrimental modifications in thin films. A new CVD system was tested using a volatile organometallic as the samarium source and reacting it with H₂S. The deposited films contained considerable amounts of oxygen as evidenced by structure analysis, and the origin was traced to the samarium organometallic. The reaction of oxygen-free samarium tricyclopentadienyl with H₂S as well as chemical transport are suggested for deposition of stress-free SmS thin films in future work.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectOptical films.en_US
dc.subjectPhase transformations (Statistical physics)en_US
dc.subjectSamarium -- Optical properties.en_US
dc.subjectThin films.en_US
dc.subjectVapor-plating.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.committeememberMacLeod, Angusen_US
dc.contributor.committeememberGibbs, Hyatten_US
dc.identifier.proquest8412667en_US
dc.identifier.oclc690920561en_US
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