Subpicosecond all optical switching in passive and active gallium arsenide/aluminum gallium arsenide nonlinear directional couplers.

Persistent Link:
http://hdl.handle.net/10150/187333
Title:
Subpicosecond all optical switching in passive and active gallium arsenide/aluminum gallium arsenide nonlinear directional couplers.
Author:
Lee, Sang Goo.
Issue Date:
1996
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Subpicosecond all optical switching device is pursued using a passive GaAs/AlGaAs multiple quantum well nonlinear directional coupler and an active GaAs/AlGaAs nonlinear directional coupler. A passive device showed all-optical switching from 2:1 contrast ratio to 2:3 with optical pulses detuned below the heavy hole exciton resonance. Underlying mechanism for the ultrafast switching is identified as an adiabatic following in semiconductors. With an active nonlinear directional coupler made of superlattice core, we demonstrated the lowest switching energy device (6pJ) with fast response of a few hundred femtoseconds. But no switching behavior is observed in an active nonlinear directional coupler which consists of well separated quantum wells. The importance of waveguide structure is emphasized while interpreting properties of waveguide core.
Type:
text; Dissertation-Reproduction (electronic)
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Physics; Graduate College
Degree Grantor:
University of Arizona
Committee Chair:
Peyghambarian, Nasser

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleSubpicosecond all optical switching in passive and active gallium arsenide/aluminum gallium arsenide nonlinear directional couplers.en_US
dc.creatorLee, Sang Goo.en_US
dc.contributor.authorLee, Sang Goo.en_US
dc.date.issued1996en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractSubpicosecond all optical switching device is pursued using a passive GaAs/AlGaAs multiple quantum well nonlinear directional coupler and an active GaAs/AlGaAs nonlinear directional coupler. A passive device showed all-optical switching from 2:1 contrast ratio to 2:3 with optical pulses detuned below the heavy hole exciton resonance. Underlying mechanism for the ultrafast switching is identified as an adiabatic following in semiconductors. With an active nonlinear directional coupler made of superlattice core, we demonstrated the lowest switching energy device (6pJ) with fast response of a few hundred femtoseconds. But no switching behavior is observed in an active nonlinear directional coupler which consists of well separated quantum wells. The importance of waveguide structure is emphasized while interpreting properties of waveguide core.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplinePhysicsen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.chairPeyghambarian, Nasseren_US
dc.contributor.committeememberWright, Ewan M.en_US
dc.contributor.committeememberMazumdar, Sumitendraen_US
dc.contributor.committeememberBinder, Rudolfen_US
dc.contributor.committeememberFallahi, Mahmouden_US
dc.identifier.proquest9620393en_US
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