Ultrafast carrier dynamics and enhanced electroabsorption in (gallium,indium)arsenide/(aluminum,indium)arsenide asymmetric double quantum well structures.

Persistent Link:
http://hdl.handle.net/10150/187240
Title:
Ultrafast carrier dynamics and enhanced electroabsorption in (gallium,indium)arsenide/(aluminum,indium)arsenide asymmetric double quantum well structures.
Author:
Krol, Mark Francis.
Issue Date:
1995
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
An experimental study, utilizing a novel nondegenerate transmission pump/probe technique, of ultrafast electron and hole tunneling in (Ga,In)As/Al,In)As asymmetric double quantum wells (ADQWs) is presented. A single time constant is observed at low carrier densities indicating the holes tunnel from the narrow well (NW) to the wide well (WW) at least as fast as electrons. At high carrier densities a two component decay is observed, consistent with phase-space filling and space-charge effects blocking tunneling carriers. The fast transfer of electrons was confirmed to be a LO-phonon assisted process. A detailed theoretical study of ultrafast hole tunneling at low carrier densities indicates that in ternary materials alloy disorder is responsible for fast hole transfer between the wells. Enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As ADQWs by the use of real space electron transfer is demonstrated. The electron concentration in both the WW and NW is investigated by field-dependent absorption and photoluminescence spectroscopy. The results are compared to absorption changes in an undoped ADQW structure which utilizes the quantum confined Stark effect. The doped modulator exhibits a significantly larger red-shift with applied field than the undoped structure.
Type:
text; Dissertation-Reproduction (electronic)
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Optical Sciences; Graduate College
Degree Grantor:
University of Arizona
Committee Chair:
Peyghambarian, Nasser

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleUltrafast carrier dynamics and enhanced electroabsorption in (gallium,indium)arsenide/(aluminum,indium)arsenide asymmetric double quantum well structures.en_US
dc.creatorKrol, Mark Francis.en_US
dc.contributor.authorKrol, Mark Francis.en_US
dc.date.issued1995en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractAn experimental study, utilizing a novel nondegenerate transmission pump/probe technique, of ultrafast electron and hole tunneling in (Ga,In)As/Al,In)As asymmetric double quantum wells (ADQWs) is presented. A single time constant is observed at low carrier densities indicating the holes tunnel from the narrow well (NW) to the wide well (WW) at least as fast as electrons. At high carrier densities a two component decay is observed, consistent with phase-space filling and space-charge effects blocking tunneling carriers. The fast transfer of electrons was confirmed to be a LO-phonon assisted process. A detailed theoretical study of ultrafast hole tunneling at low carrier densities indicates that in ternary materials alloy disorder is responsible for fast hole transfer between the wells. Enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As ADQWs by the use of real space electron transfer is demonstrated. The electron concentration in both the WW and NW is investigated by field-dependent absorption and photoluminescence spectroscopy. The results are compared to absorption changes in an undoped ADQW structure which utilizes the quantum confined Stark effect. The doped modulator exhibits a significantly larger red-shift with applied field than the undoped structure.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.chairPeyghambarian, Nasseren_US
dc.contributor.committeememberBinder, Rudolfen_US
dc.contributor.committeememberKippelen, Bernarden_US
dc.identifier.proquest9603386en_US
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