Finite element thermomechanical analysis of electronic packaging problems using disturbed state constitutive models.

Persistent Link:
http://hdl.handle.net/10150/186961
Title:
Finite element thermomechanical analysis of electronic packaging problems using disturbed state constitutive models.
Author:
Basaran, Cemalettin
Issue Date:
1994
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
In this dissertation a finite element procedure using the Disturbed State Concept constitutive models is proposed for the thermomechanical analysis of electronics packaging problems. First, microelectronics packaging types and the problems facing the electronics industry are discussed. Next, the literature in the field of constitutive models and the finite element procedures available for microelectronics packaging materials and interfaces is reviewed. The previous formulation of the Disturbed State Concept is modified so that different stresses and different strains are allowed in the intact and the fully adjusted parts of the material. Furthermore, the thermo elasto-viscoplastic with disturbance constitutive model is improved to handle the continuous temperature change and the hold time. These last features enhance the model so that it can be used in a finite element code to simulate the behavior of the microelectronics packaging materials and interfaces in temperature cycling. A new finite element procedure is developed to implement the improved Disturbed State Concept formulation. The finite element procedure includes a wide range of material models, starting from the linear elastic to thermo elasto-viscoplastic with disturbance. In order to eliminate the finite element mesh sensitivity encountered in strain-softening materials, a new procedure is proposed. The Disturbed State Average Strain method reduces or eliminates the finite element mesh sensitivity. This is proved through a number of example problems. The proposed finite element procedure is verified against a number of sets of experimental data obtained from the literature.
Type:
text; Dissertation-Reproduction (electronic)
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Civil Engineering and Engineering Mechanics; Graduate College
Degree Grantor:
University of Arizona
Committee Chair:
Desai, Chandrakant S.

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleFinite element thermomechanical analysis of electronic packaging problems using disturbed state constitutive models.en_US
dc.creatorBasaran, Cemalettinen_US
dc.contributor.authorBasaran, Cemalettinen_US
dc.date.issued1994en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractIn this dissertation a finite element procedure using the Disturbed State Concept constitutive models is proposed for the thermomechanical analysis of electronics packaging problems. First, microelectronics packaging types and the problems facing the electronics industry are discussed. Next, the literature in the field of constitutive models and the finite element procedures available for microelectronics packaging materials and interfaces is reviewed. The previous formulation of the Disturbed State Concept is modified so that different stresses and different strains are allowed in the intact and the fully adjusted parts of the material. Furthermore, the thermo elasto-viscoplastic with disturbance constitutive model is improved to handle the continuous temperature change and the hold time. These last features enhance the model so that it can be used in a finite element code to simulate the behavior of the microelectronics packaging materials and interfaces in temperature cycling. A new finite element procedure is developed to implement the improved Disturbed State Concept formulation. The finite element procedure includes a wide range of material models, starting from the linear elastic to thermo elasto-viscoplastic with disturbance. In order to eliminate the finite element mesh sensitivity encountered in strain-softening materials, a new procedure is proposed. The Disturbed State Average Strain method reduces or eliminates the finite element mesh sensitivity. This is proved through a number of example problems. The proposed finite element procedure is verified against a number of sets of experimental data obtained from the literature.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineCivil Engineering and Engineering Mechanicsen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.chairDesai, Chandrakant S.en_US
dc.contributor.committeememberKundu, Tribikramen_US
dc.contributor.committeememberJackson, Kennethen_US
dc.contributor.committeememberPrince, Johnen_US
dc.contributor.committeememberArmaleh, Sonia Hannaen_US
dc.identifier.proquest9517572en_US
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