Persistent Link:
http://hdl.handle.net/10150/186629
Title:
High-density plasma dynamics in semiconductors.
Author:
Meissner, Kenith Erwin, II.
Issue Date:
1994
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
This dissertation presents a study of high density plasma dynamics in semiconductors. Chapter 1 serves as an introduction and presents the basics of how we will use optical nonlinearities in the study of a high density plasma. Chapter 2 develops the necessary femtosecond laser system and techniques utilized in this investigation. The basics of our colliding pulse modelocked femtosecond laser system are presented. A variety of data acquisition systems are also outlined and discussed. A detailed description of our method of chirp measurement and correction rounds out the chapter. Chapter 3 presents a study of plasma dynamics in type I and type II GaAs multiple quantum well samples. First, the samples are compared in the quasi-equilibrium regime. The transfer of carriers from the wells to the barriers in the type II sample is found to profoundly affect the optical nonlinearities. A many-body theory calculation of these nonlinearities is then presented. We also utilize the unique properties of the type II structure to study the picosecond dynamics of a one component (hole) plasma. Finally, the possibility of transient gain in the type II structure is explored and discussed. Chapter 4 describes an investigation into the gain dynamics in an optically inverted semiconductor. Spectral hole burning is observed throughout the gain region, and the dynamics of the hole burning are shown. Since this system is highly inhomogeneously broadened, these results are first modeled by a group of noninteracting, inhomogeneously broadened, two level transitions. This model permits simple insight into the dynamics, but does not do a complete job of modeling the results. So, a full many-body treatment is included to more completely describe the experiment. Chapter 5 presents a study of the dephasing time through the gain region and into the absorption region of an optically excited GaAs multiple quantum well sample. Both spectral and temporal methods for measuring the dephasing time are utilized. A distinct maximum of the dephasing time is observed at the transparency point. A many-body theory calculating the carrier-carrier scattering rate is presented to explain this maximum.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Dissertations, Academic.; Optics.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Optical Sciences; Graduate College
Degree Grantor:
University of Arizona
Committee Chair:
Peyghambarian, Nasser

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleHigh-density plasma dynamics in semiconductors.en_US
dc.creatorMeissner, Kenith Erwin, II.en_US
dc.contributor.authorMeissner, Kenith Erwin, II.en_US
dc.date.issued1994en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThis dissertation presents a study of high density plasma dynamics in semiconductors. Chapter 1 serves as an introduction and presents the basics of how we will use optical nonlinearities in the study of a high density plasma. Chapter 2 develops the necessary femtosecond laser system and techniques utilized in this investigation. The basics of our colliding pulse modelocked femtosecond laser system are presented. A variety of data acquisition systems are also outlined and discussed. A detailed description of our method of chirp measurement and correction rounds out the chapter. Chapter 3 presents a study of plasma dynamics in type I and type II GaAs multiple quantum well samples. First, the samples are compared in the quasi-equilibrium regime. The transfer of carriers from the wells to the barriers in the type II sample is found to profoundly affect the optical nonlinearities. A many-body theory calculation of these nonlinearities is then presented. We also utilize the unique properties of the type II structure to study the picosecond dynamics of a one component (hole) plasma. Finally, the possibility of transient gain in the type II structure is explored and discussed. Chapter 4 describes an investigation into the gain dynamics in an optically inverted semiconductor. Spectral hole burning is observed throughout the gain region, and the dynamics of the hole burning are shown. Since this system is highly inhomogeneously broadened, these results are first modeled by a group of noninteracting, inhomogeneously broadened, two level transitions. This model permits simple insight into the dynamics, but does not do a complete job of modeling the results. So, a full many-body treatment is included to more completely describe the experiment. Chapter 5 presents a study of the dephasing time through the gain region and into the absorption region of an optically excited GaAs multiple quantum well sample. Both spectral and temporal methods for measuring the dephasing time are utilized. A distinct maximum of the dephasing time is observed at the transparency point. A many-body theory calculating the carrier-carrier scattering rate is presented to explain this maximum.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectDissertations, Academic.en_US
dc.subjectOptics.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.chairPeyghambarian, Nasseren_US
dc.contributor.committeememberGibbs, Hyatten_US
dc.contributor.committeememberKoch, Stephanen_US
dc.identifier.proquest9424962en_US
dc.identifier.oclc722473161en_US
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