Persistent Link:
http://hdl.handle.net/10150/186624
Title:
EXTERNAL SWITCHING OF A BISTABLE GALLIUM-ARSENIDE ETALON.
Author:
TARNG, SHIN-SHENG.
Issue Date:
1983
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The switching energy and speed of a bistable GaAs etalon have been measured. At liquid nitrogen temperature, the switch-on was achieved by injecting a high density of carriers with an above-band-edge 600-nm external pulse. A minimum energy of 1 nJ was required. The measured switching time was 200 ps, limited by the detector response time. The switch-off was obtained by heating the device with a 300-nJ external pulse and consequently shifting the Fabry-Perot peak. Switch-off time was about 40 ns. Room-temperature bistability was first achieved in a GaAs-AlGaAs superlattice etalon. Switch-on by a near-band-edge 845-nm pulse of 10-pJ energy was observed.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Optical bistability.; Optical data processing.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Optical Sciences; Graduate College
Degree Grantor:
University of Arizona
Advisor:
Gibbs, Hyatt M.

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleEXTERNAL SWITCHING OF A BISTABLE GALLIUM-ARSENIDE ETALON.en_US
dc.creatorTARNG, SHIN-SHENG.en_US
dc.contributor.authorTARNG, SHIN-SHENG.en_US
dc.date.issued1983en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe switching energy and speed of a bistable GaAs etalon have been measured. At liquid nitrogen temperature, the switch-on was achieved by injecting a high density of carriers with an above-band-edge 600-nm external pulse. A minimum energy of 1 nJ was required. The measured switching time was 200 ps, limited by the detector response time. The switch-off was obtained by heating the device with a 300-nJ external pulse and consequently shifting the Fabry-Perot peak. Switch-off time was about 40 ns. Room-temperature bistability was first achieved in a GaAs-AlGaAs superlattice etalon. Switch-on by a near-band-edge 845-nm pulse of 10-pJ energy was observed.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectOptical bistability.en_US
dc.subjectOptical data processing.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorGibbs, Hyatt M.en_US
dc.contributor.committeememberWing William H.en_US
dc.contributor.committeememberStegeman, Georgeen_US
dc.identifier.proquest8319735en_US
dc.identifier.oclc689058249en_US
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