Persistent Link:
http://hdl.handle.net/10150/186188
Title:
Total-dose gain degradation in modern bipolar transistors.
Author:
Nowlin, Robert Nathaniel.
Issue Date:
1993
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS compatible bipolar transistors are presented. A model for the post-irradiation excess base current is described. The model is applied to separately calculate the two radiation-induced damage densities: the net oxide charge density and the midgap-level interface-trap density. Hardness assurance testing recommendations are made based on the observed experimental trends.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Dissertations, Academic.; Electrical engineering.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Electrical and Computer Engineering; Graduate College
Degree Grantor:
University of Arizona
Committee Chair:
Schrimpf, Ronald D.

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleTotal-dose gain degradation in modern bipolar transistors.en_US
dc.creatorNowlin, Robert Nathaniel.en_US
dc.contributor.authorNowlin, Robert Nathaniel.en_US
dc.date.issued1993en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS compatible bipolar transistors are presented. A model for the post-irradiation excess base current is described. The model is applied to separately calculate the two radiation-induced damage densities: the net oxide charge density and the midgap-level interface-trap density. Hardness assurance testing recommendations are made based on the observed experimental trends.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectDissertations, Academic.en_US
dc.subjectElectrical engineering.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.chairSchrimpf, Ronald D.en_US
dc.contributor.committeememberGalloway, Kenneth F.en_US
dc.contributor.committeememberBrews, John R.en_US
dc.identifier.proquest9322689en_US
dc.identifier.oclc715448096en_US
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