Persistent Link:
http://hdl.handle.net/10150/185988
Title:
Analytical modeling of single-event burnout of power transistors.
Author:
Johnson, Gregory Howard.
Issue Date:
1992
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
When electronic components are to be used in systems destined for operation in the extraterrestrial environment, one must be concerned about the effects of the naturally occurring radiation in outer space. For example, power metal-oxide-semiconductor-field-effect transistors (MOSFETs) and power bipolar junction transistors (BJTs) are susceptible to a phenomenon called single-event burnout (SEB) which may result from bombardment by heavy ions originating from the nuclear reactions within the sun and other stars. SEB is a catastrophic failure mechanism initiated by the passage of a heavy ion through sensitive regions of the power MOSFET or power BJT. The main thrust of this dissertation is an analytical model describing the device-related aspects of the SEB mechanism. Physical device parameters such as doping concentrations, dimensions of various regions, and operating bias are related to SEB by the model. It is shown that the model predicts a decrease in the SEB susceptibility with a decrease in the internal base resistance (in the power BJT or parasitic BJT in the power MOSFET structure), a decrease in the operating bias, or an increase in the ambient device temperature. These findings are then qualitatively verified with experimental data.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Dissertations, Academic.; Electrical engineering.; Power transistors -- Effect of radiation on.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Electrical and Computer Engineering; Graduate College
Degree Grantor:
University of Arizona
Committee Chair:
Schrimpf, Ron

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleAnalytical modeling of single-event burnout of power transistors.en_US
dc.creatorJohnson, Gregory Howard.en_US
dc.contributor.authorJohnson, Gregory Howard.en_US
dc.date.issued1992en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractWhen electronic components are to be used in systems destined for operation in the extraterrestrial environment, one must be concerned about the effects of the naturally occurring radiation in outer space. For example, power metal-oxide-semiconductor-field-effect transistors (MOSFETs) and power bipolar junction transistors (BJTs) are susceptible to a phenomenon called single-event burnout (SEB) which may result from bombardment by heavy ions originating from the nuclear reactions within the sun and other stars. SEB is a catastrophic failure mechanism initiated by the passage of a heavy ion through sensitive regions of the power MOSFET or power BJT. The main thrust of this dissertation is an analytical model describing the device-related aspects of the SEB mechanism. Physical device parameters such as doping concentrations, dimensions of various regions, and operating bias are related to SEB by the model. It is shown that the model predicts a decrease in the SEB susceptibility with a decrease in the internal base resistance (in the power BJT or parasitic BJT in the power MOSFET structure), a decrease in the operating bias, or an increase in the ambient device temperature. These findings are then qualitatively verified with experimental data.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectDissertations, Academic.en_US
dc.subjectElectrical engineering.en_US
dc.subjectPower transistors -- Effect of radiation on.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.chairSchrimpf, Ronen_US
dc.contributor.committeememberGalloway, Kenen_US
dc.contributor.committeememberBrews, Johnen_US
dc.identifier.proquest9307653en_US
dc.identifier.oclc713866445en_US
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