Theory of optical and electronic properties of semiconductor heterostructures with many-body effects.

Persistent Link:
http://hdl.handle.net/10150/185886
Title:
Theory of optical and electronic properties of semiconductor heterostructures with many-body effects.
Author:
Pereira, Mauro Fernandes, Jr.
Issue Date:
1992
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Optical and electronic properties of semiconductors heterostructures are analyzed, combining many-body and band structure engineering techniques. The Coulomb interaction is considered in different excitation regimes. For the low density excitonic limit, it is shown that superlattices can be modelled as 3D effective anisotropic media and the method is applied to the computation of exciton binding energies. In the high density regime, coupled band optical Bloch equations are obtained, combining Coulomb effects with the solutions of the Luttinger Hamiltonian, and the problem is solved in general under quasi-equilibrium conditions. Expressions for the band gap shift and the Coulomb enhancement in a Pade' approximation are obtained and solved in the context of a quasi-statically screened Coulomb interaction. The resulting equations are used to study the influence of band-structure and many-body effects in the gain and α-factor of both lattice-matched and strained quantum well lasers.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Dissertations, Academic.; Optics.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Optical Sciences; Graduate College
Degree Grantor:
University of Arizona
Advisor:
Koch, Stephan W.

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleTheory of optical and electronic properties of semiconductor heterostructures with many-body effects.en_US
dc.creatorPereira, Mauro Fernandes, Jr.en_US
dc.contributor.authorPereira, Mauro Fernandes, Jr.en_US
dc.date.issued1992en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractOptical and electronic properties of semiconductors heterostructures are analyzed, combining many-body and band structure engineering techniques. The Coulomb interaction is considered in different excitation regimes. For the low density excitonic limit, it is shown that superlattices can be modelled as 3D effective anisotropic media and the method is applied to the computation of exciton binding energies. In the high density regime, coupled band optical Bloch equations are obtained, combining Coulomb effects with the solutions of the Luttinger Hamiltonian, and the problem is solved in general under quasi-equilibrium conditions. Expressions for the band gap shift and the Coulomb enhancement in a Pade' approximation are obtained and solved in the context of a quasi-statically screened Coulomb interaction. The resulting equations are used to study the influence of band-structure and many-body effects in the gain and α-factor of both lattice-matched and strained quantum well lasers.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectDissertations, Academic.en_US
dc.subjectOptics.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorKoch, Stephan W.en_US
dc.contributor.committeememberPeyghambarian, Nasseren_US
dc.contributor.committeememberSargent, Murray, IIIen_US
dc.identifier.proquest9234883en_US
dc.identifier.oclc712789847en_US
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