Persistent Link:
http://hdl.handle.net/10150/185574
Title:
Particle contamination on silicon wafers etched in an RF plasma.
Author:
Smadi, Mithkal Moh'd.
Issue Date:
1991
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Particle contamination and etch depth on silicon wafers etched in SF₆/Ar and CF₄/O₂/Ar plasmas are examined as a function of five critical plasma parameters using response surface methodology. The explored plasma parameters are 13.56 MHz RF power, 100 KHz wafer electrode power, pressure, process gas flow rate, and etch time. The experiments are conducted in a modified Tegal MCR-1 single wafer reactor operated in the triode mode. In both chemistries, particle contamination is a predictable function of the externally controlled plasma parameters. Particle deposition and etch depth have a linear dependence on 13.56 MHz RF power, 100 KHz power, and etch time. Also, the particle deposition and etch depth have quadratic dependence on process gas flow rate. In the pressure range explored, particle deposition on the wafers is independent of pressure. In addition, in each chemistry, the behavior of particle deposition and etch depth are similar suggesting that the mechanisms might be analogous. In the SF₆/Ar case, Auger and EDX chemical analysis of the particles reveal the presence of silicon, fluorine, oxygen, sulfur, and aluminum. In the CF₄/O₂/Ar case, particles contain only silicon with carbon and oxygen on the surface.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Dissertations, Academic; Electrical engineering.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Electrical, and Computer Engineering; Graduate College
Degree Grantor:
University of Arizona
Advisor:
Carlile, Robert N.

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleParticle contamination on silicon wafers etched in an RF plasma.en_US
dc.creatorSmadi, Mithkal Moh'd.en_US
dc.contributor.authorSmadi, Mithkal Moh'd.en_US
dc.date.issued1991en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractParticle contamination and etch depth on silicon wafers etched in SF₆/Ar and CF₄/O₂/Ar plasmas are examined as a function of five critical plasma parameters using response surface methodology. The explored plasma parameters are 13.56 MHz RF power, 100 KHz wafer electrode power, pressure, process gas flow rate, and etch time. The experiments are conducted in a modified Tegal MCR-1 single wafer reactor operated in the triode mode. In both chemistries, particle contamination is a predictable function of the externally controlled plasma parameters. Particle deposition and etch depth have a linear dependence on 13.56 MHz RF power, 100 KHz power, and etch time. Also, the particle deposition and etch depth have quadratic dependence on process gas flow rate. In the pressure range explored, particle deposition on the wafers is independent of pressure. In addition, in each chemistry, the behavior of particle deposition and etch depth are similar suggesting that the mechanisms might be analogous. In the SF₆/Ar case, Auger and EDX chemical analysis of the particles reveal the presence of silicon, fluorine, oxygen, sulfur, and aluminum. In the CF₄/O₂/Ar case, particles contain only silicon with carbon and oxygen on the surface.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectDissertations, Academicen_US
dc.subjectElectrical engineering.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineElectrical, and Computer Engineeringen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorCarlile, Robert N.en_US
dc.contributor.committeememberO'Hanlon, Johnen_US
dc.contributor.committeememberBeck, Scotten_US
dc.contributor.committeememberBowen, Theodoreen_US
dc.identifier.proquest9200025en_US
dc.identifier.oclc711708960en_US
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