Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy.

Persistent Link:
http://hdl.handle.net/10150/185370
Title:
Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy.
Author:
Pon, Russell Michael.
Issue Date:
1991
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Gain spectra are characterized as a function of the well-width in GaAs multiple quantum wells with AlGaAs barriers by nanosecond pump-probe spectroscopy. The gain bandwidth is larger for the same peak gain in wider well-width multiple quantum wells and is explained qualitatively. The Iinewidth broadening factor is calculated from the gain spectra and studied as a material parameter. It is shown that the linewidth broadening factor increases with wavelength and decreases with carrier density. MBE-grown integrated-mirror etalons made from GaAs/AlGaAs. in the 800 nm wavelength region. and GaAllnAs/InAlAs. in the 1.3 μm wavelength region. exhibit lasing by optical pumping. Below threshold. the 800 nm integrated-mirror etalon is used for nonlinear switching which. in the architecture presented. is capable of extracting a single 10 ps pulse from a pair of pulses spaced 40 ps apart. Nonlinear optical properties of type II GaAs/AlAs short-period superlattices are presented and show an apparent high energy shift of the absorption band edge at 10K and no shift at 77 K as the absorption is saturated. Type I multiple quantum well structures of similar dimensions show similar high energy band edge shifts for both temperatures. 10K and 77 K due to phase-space filling. In contrast. electrons in type II structures reside in the barrier and do not contribute to the chemical potential. Transitions in GaAs/AlGaAs coupled-well superlattices show transitions that are a function of the center barrier thickness and reveal shorter carrier lifetimes than a GaAs quantum well of equal thickness without a center barrier.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Dissertations, Academic; Optics.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Optical Science; Graduate College
Degree Grantor:
University of Arizona
Advisor:
Gibbs, Hyatt M.

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleOptical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy.en_US
dc.creatorPon, Russell Michael.en_US
dc.contributor.authorPon, Russell Michael.en_US
dc.date.issued1991en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractGain spectra are characterized as a function of the well-width in GaAs multiple quantum wells with AlGaAs barriers by nanosecond pump-probe spectroscopy. The gain bandwidth is larger for the same peak gain in wider well-width multiple quantum wells and is explained qualitatively. The Iinewidth broadening factor is calculated from the gain spectra and studied as a material parameter. It is shown that the linewidth broadening factor increases with wavelength and decreases with carrier density. MBE-grown integrated-mirror etalons made from GaAs/AlGaAs. in the 800 nm wavelength region. and GaAllnAs/InAlAs. in the 1.3 μm wavelength region. exhibit lasing by optical pumping. Below threshold. the 800 nm integrated-mirror etalon is used for nonlinear switching which. in the architecture presented. is capable of extracting a single 10 ps pulse from a pair of pulses spaced 40 ps apart. Nonlinear optical properties of type II GaAs/AlAs short-period superlattices are presented and show an apparent high energy shift of the absorption band edge at 10K and no shift at 77 K as the absorption is saturated. Type I multiple quantum well structures of similar dimensions show similar high energy band edge shifts for both temperatures. 10K and 77 K due to phase-space filling. In contrast. electrons in type II structures reside in the barrier and do not contribute to the chemical potential. Transitions in GaAs/AlGaAs coupled-well superlattices show transitions that are a function of the center barrier thickness and reveal shorter carrier lifetimes than a GaAs quantum well of equal thickness without a center barrier.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectDissertations, Academicen_US
dc.subjectOptics.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineOptical Scienceen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorGibbs, Hyatt M.en_US
dc.contributor.committeememberKhitrova, Galinaen_US
dc.contributor.committeememberPeyghambarian, Nasseren_US
dc.identifier.proquest9123145en_US
dc.identifier.oclc709621751en_US
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