Optical nonlinearities in bulk, multiple-quantum-well and doping superlattice gallium-arsenide with device applications.

Persistent Link:
http://hdl.handle.net/10150/184700
Title:
Optical nonlinearities in bulk, multiple-quantum-well and doping superlattice gallium-arsenide with device applications.
Author:
Chavez-Pirson, Arturo.
Issue Date:
1989
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
The linear and nonlinear optical properties of bulk, multiple-quantum-well, and doping superlattice GaAs are investigated experimentally and theoretically, and their properties are discussed in terms of their applicability to optical bistable devices and optical logic gates. A systematic study of the room temperature, frequency-dependent optical nonlinearities of bulk and multiple-quantum-well GaAs is reported and discussed. The results of the bulk GaAs experiments are in good agreement with a recently developed plasma theory. The carrier lifetime and the optical nonlinearities of multiple-quantum-well structures of varying well sizes are measured and compared to bulk GaAs. The prospect of lowering the power threshold for nonlinear action is explored in GaAs doping superlattices. The ability to increase the carrier lifetime with internal space charge fields is demonstrated experimentally in a doping superlattice structure. The possibility of using these long lifetimes to lower the power requirements of optical bistability is discussed. The linear optical properties of quantum-confined structures are studied both in GaAs/AlGaAs quantum wires as well as in CdS quantum dots. The enhanced confinement of the carriers shifts the absorption band-edge to higher energies relative to bulk. The techniques used to fabricate these nanometer-sized features are outlined. Several optical device structures are fabricated and tested. The nonlinear reflection properties of a distributed feedback structure consisting of a GaAs/AlGaAs quarter wave stack are evaluated experimentally both from the physics and device point of view. Such a structure is used to monolithically grow a nonlinear Fabry-Perot etalon for optical bistability and optical logic gating. This integrated Fabry-Perot device is uniform over a 1 cm² area with switching characteristics comparable to the best devices previously obtained and with improved thermal stability. The fact that diode lasers can be used as light sources makes GaAs optical logic gates more attractive for optical signal processing. An all-optical NOR gate using GaAs as nonlinear optical material and diode laser as optical source is demonstrated for this purpose.
Type:
text; Dissertation-Reproduction (electronic)
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Optical Sciences; Graduate College
Degree Grantor:
University of Arizona
Advisor:
Gibbs, Hyatt

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleOptical nonlinearities in bulk, multiple-quantum-well and doping superlattice gallium-arsenide with device applications.en_US
dc.creatorChavez-Pirson, Arturo.en_US
dc.contributor.authorChavez-Pirson, Arturo.en_US
dc.date.issued1989en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractThe linear and nonlinear optical properties of bulk, multiple-quantum-well, and doping superlattice GaAs are investigated experimentally and theoretically, and their properties are discussed in terms of their applicability to optical bistable devices and optical logic gates. A systematic study of the room temperature, frequency-dependent optical nonlinearities of bulk and multiple-quantum-well GaAs is reported and discussed. The results of the bulk GaAs experiments are in good agreement with a recently developed plasma theory. The carrier lifetime and the optical nonlinearities of multiple-quantum-well structures of varying well sizes are measured and compared to bulk GaAs. The prospect of lowering the power threshold for nonlinear action is explored in GaAs doping superlattices. The ability to increase the carrier lifetime with internal space charge fields is demonstrated experimentally in a doping superlattice structure. The possibility of using these long lifetimes to lower the power requirements of optical bistability is discussed. The linear optical properties of quantum-confined structures are studied both in GaAs/AlGaAs quantum wires as well as in CdS quantum dots. The enhanced confinement of the carriers shifts the absorption band-edge to higher energies relative to bulk. The techniques used to fabricate these nanometer-sized features are outlined. Several optical device structures are fabricated and tested. The nonlinear reflection properties of a distributed feedback structure consisting of a GaAs/AlGaAs quarter wave stack are evaluated experimentally both from the physics and device point of view. Such a structure is used to monolithically grow a nonlinear Fabry-Perot etalon for optical bistability and optical logic gating. This integrated Fabry-Perot device is uniform over a 1 cm² area with switching characteristics comparable to the best devices previously obtained and with improved thermal stability. The fact that diode lasers can be used as light sources makes GaAs optical logic gates more attractive for optical signal processing. An all-optical NOR gate using GaAs as nonlinear optical material and diode laser as optical source is demonstrated for this purpose.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineOptical Sciencesen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorGibbs, Hyatten_US
dc.contributor.committeememberPeyghambarian, Nasseren_US
dc.contributor.committeememberKoch, Stephanen_US
dc.identifier.proquest8919024en_US
dc.identifier.oclc702386963en_US
All Items in UA Campus Repository are protected by copyright, with all rights reserved, unless otherwise indicated.