Spectral technique in relaxation-based simulation of MOS circuits.

Persistent Link:
http://hdl.handle.net/10150/184650
Title:
Spectral technique in relaxation-based simulation of MOS circuits.
Author:
Guarini, Marcello Walter.
Issue Date:
1989
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
A new method for transient simulation of integrated circuits has been developed and investigated. The method utilizes expansion of circuit variables into Chebyshev series. A prototype computer simulation program based on this technique has been implemented and applied in the transient simulation of several MOS circuits. The results have been compared with those generated by SPICE. The method has been also combined with the waveform relaxation technique. Several algorithms were developed using the Gauss-Seidel and Gauss-Jacobi iterative procedures. The algorithms based on the Gauss-Seidel iterative procedure were implemented in the prototype software. They offer substantial CPU time savings in comparison with SPICE without compromising the accuracy of solutions. A description of the prototype computer simulation program and a summary of the results of simulation experiments are included.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Chebyshev polynomials -- Computer programs.; Integrated circuits -- Computer simulation.; Metal oxide semiconductors -- Computer simulation.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Electrical and Computer Engineering; Graduate College
Degree Grantor:
University of Arizona
Advisor:
Palusinski, Olgierd A.

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleSpectral technique in relaxation-based simulation of MOS circuits.en_US
dc.creatorGuarini, Marcello Walter.en_US
dc.contributor.authorGuarini, Marcello Walter.en_US
dc.date.issued1989en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractA new method for transient simulation of integrated circuits has been developed and investigated. The method utilizes expansion of circuit variables into Chebyshev series. A prototype computer simulation program based on this technique has been implemented and applied in the transient simulation of several MOS circuits. The results have been compared with those generated by SPICE. The method has been also combined with the waveform relaxation technique. Several algorithms were developed using the Gauss-Seidel and Gauss-Jacobi iterative procedures. The algorithms based on the Gauss-Seidel iterative procedure were implemented in the prototype software. They offer substantial CPU time savings in comparison with SPICE without compromising the accuracy of solutions. A description of the prototype computer simulation program and a summary of the results of simulation experiments are included.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectChebyshev polynomials -- Computer programs.en_US
dc.subjectIntegrated circuits -- Computer simulation.en_US
dc.subjectMetal oxide semiconductors -- Computer simulation.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorPalusinski, Olgierd A.en_US
dc.contributor.committeememberHamilton, Douglas J.en_US
dc.contributor.committeememberWait, John V.en_US
dc.identifier.proquest8915960en_US
dc.identifier.oclc702151677en_US
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