Persistent Link:
http://hdl.handle.net/10150/184437
Title:
Modeling of silicon diodes.
Author:
Tsao, Jenn.
Issue Date:
1988
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
A relatively simple, yet complete analytical model for predicting the performance of illuminated or unilluminated (dark) pn diodes with arbitrary doping profiles is developed and presented in this dissertation. It can be used to calculate the saturation current, minority carrier density, short circuit current, spectral response, and effective low-high (p-p⁺) junction recombination velocities of such diodes. The model is applied to dark or illuminated n⁺-p-p⁺ diodes as a function of the front and back surface recombination velocities and the bulk doping profiles. The analysis includes heavy doping effects. The results predicted by this model are compared with those predicted by numerical simulation programs. Both results agree well with each other and with the experimental data available. The complete analytical expressions produced by the model can be reduced to simpler forms for the transparent and quasi-transparent cases. These forms agree with the special case expressions developed by others. The new model is a substantial contribution leading to improved understanding of such devices.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Silicon diodes -- Mathematical models.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Electrical and Computer Engineering; Graduate College
Degree Grantor:
University of Arizona
Advisor:
Mattson, Roy H.

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleModeling of silicon diodes.en_US
dc.creatorTsao, Jenn.en_US
dc.contributor.authorTsao, Jenn.en_US
dc.date.issued1988en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractA relatively simple, yet complete analytical model for predicting the performance of illuminated or unilluminated (dark) pn diodes with arbitrary doping profiles is developed and presented in this dissertation. It can be used to calculate the saturation current, minority carrier density, short circuit current, spectral response, and effective low-high (p-p⁺) junction recombination velocities of such diodes. The model is applied to dark or illuminated n⁺-p-p⁺ diodes as a function of the front and back surface recombination velocities and the bulk doping profiles. The analysis includes heavy doping effects. The results predicted by this model are compared with those predicted by numerical simulation programs. Both results agree well with each other and with the experimental data available. The complete analytical expressions produced by the model can be reduced to simpler forms for the transparent and quasi-transparent cases. These forms agree with the special case expressions developed by others. The new model is a substantial contribution leading to improved understanding of such devices.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectSilicon diodes -- Mathematical models.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorMattson, Roy H.en_US
dc.contributor.committeememberFaney, Walter J.en_US
dc.contributor.committeememberReagan, John A.en_US
dc.identifier.proquest8816323en_US
dc.identifier.oclc701249378en_US
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