Persistent Link:
http://hdl.handle.net/10150/184236
Title:
DESIGN OF MOS INTEGRATED CIRCUITS AT HIGH TEMPERATURE.
Author:
CHAN, TZO YAO.
Issue Date:
1982
Publisher:
The University of Arizona.
Rights:
Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.
Abstract:
Areas which require high-temperature MOS circuits are instrumentations for geothermal and petroleum well-logging, space exploration, aero-propulsion systems, and other hostile environments. MOS digital circuits at high temperature are examined as well as the maximum operating temperature of MOS devices. Factors affecting high-temperature operation of these devices, including threshold voltage sensitivity, mobility degradation, leakage current characterization and interactions, zero-TC current in analog applications and reliability considerations, are discussed. Methods to reduce threshold voltage sensitivities, process modifications to reduce leakage current density at high temperature, circuit techniques to eliminate the leakage current effects, diode compensation, CMOS thermal latch-up and MOS scaling rules at high temperature are investigated. Experimental results of epitaxial diodes to verify the leakage current reduction effect are discussed.
Type:
text; Dissertation-Reproduction (electronic)
Keywords:
Metal oxide semiconductors -- Thermal properties.; Integrated circuits -- Thermal properties.; Electronic circuit design.; Heat resistant materials.
Degree Name:
Ph.D.
Degree Level:
doctoral
Degree Program:
Electrical Engineering; Graduate College
Degree Grantor:
University of Arizona
Advisor:
Hamilton, Douglas J.

Full metadata record

DC FieldValue Language
dc.language.isoenen_US
dc.titleDESIGN OF MOS INTEGRATED CIRCUITS AT HIGH TEMPERATURE.en_US
dc.creatorCHAN, TZO YAO.en_US
dc.contributor.authorCHAN, TZO YAO.en_US
dc.date.issued1982en_US
dc.publisherThe University of Arizona.en_US
dc.rightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.en_US
dc.description.abstractAreas which require high-temperature MOS circuits are instrumentations for geothermal and petroleum well-logging, space exploration, aero-propulsion systems, and other hostile environments. MOS digital circuits at high temperature are examined as well as the maximum operating temperature of MOS devices. Factors affecting high-temperature operation of these devices, including threshold voltage sensitivity, mobility degradation, leakage current characterization and interactions, zero-TC current in analog applications and reliability considerations, are discussed. Methods to reduce threshold voltage sensitivities, process modifications to reduce leakage current density at high temperature, circuit techniques to eliminate the leakage current effects, diode compensation, CMOS thermal latch-up and MOS scaling rules at high temperature are investigated. Experimental results of epitaxial diodes to verify the leakage current reduction effect are discussed.en_US
dc.typetexten_US
dc.typeDissertation-Reproduction (electronic)en_US
dc.subjectMetal oxide semiconductors -- Thermal properties.en_US
dc.subjectIntegrated circuits -- Thermal properties.en_US
dc.subjectElectronic circuit design.en_US
dc.subjectHeat resistant materials.en_US
thesis.degree.namePh.D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.disciplineElectrical Engineeringen_US
thesis.degree.disciplineGraduate Collegeen_US
thesis.degree.grantorUniversity of Arizonaen_US
dc.contributor.advisorHamilton, Douglas J.en_US
dc.identifier.proquest8217401en_US
dc.identifier.oclc681936926en_US
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